Effect Of Annealing Temperature On The Performance Of Zno Based Dye Sensitize Solar Cell

Abstract

Within this study, we explore the effects of annealing temperature on the overall performance of ZnO-based dye-sensitized solar cells. The Electrophoretic Deposition Method (EPD) was used to prepare the photo-electrodes. As a post-deposition treatment, the electrodeposited photo anodes were annealed at various annealing temperatures ranging from 100 to 500 ℃. When annealing temperature is increased, the open circuit voltage, short circuit current density increase. As a result, the fill factor and the overall efficiency also improved (from 1.59 to 2.21%). The series resistance of the cells (calculated from Dark data) reduces by increasing the annealing temperature up to 400 ℃. Similar results have been observed from the calculated series resistance from the I-V curve, which is the reason for the change in the photovoltaic performance. On the other hand, the shunt resistance of the cell (calculated from Dark data) increases by increasing the annealing temperature up to 400 ℃. The same results have been observed from the calculated shunt resistance from the I-V curve, which is the reason for the change in the photovoltaic performance. We also determine ideality factor and barrier height using different methods such as the Cheung_Cheung function and Norde method. The ideality factor affects the fill factor of the solar cell; when n increases, the fill factor decreases and eventually affects the efficiency. Also, there is a linear relationship between the ideality factor and barrier height. The increasing temperature up to 400 ℃ gives a lower ideality factor and higher barrier height. Moreover, the series and shunt resistance under illumination shows different values from the dark condition but follows the same trend. Under both dark and illumination conditions, the photovoltaic performance data is identical to the series and shunt resistance data.