Effect Of Dye-Loading Time On The Performance Of Zno Based Dye Sensitized Solar Cell

Abstract

Dye-sensitized solar cells (DSSCs) are one of the new photovoltaic technologies with strong commercial prospects because of their semitransparency, low production cost, simple fabrication techniques, and high performance under low-light situations. In this investigation, the effect of varying dye-loading time on photovoltaic performance for dye sensitized solar cells has been observed using I-V Data Analysis. In the lab, the cell was fabricated using the electrophoretic deposition technique which ensures a uniform layer of metal oxide. The photoanode is immersed in the dye for 30 minutes, 1 hour, 2 hours, and 3 hours during the cell fabrication process. All the experimental procedures are done at room temperature. I-V data under dark and illumination conditions are measured with a solar simulator in the air with the area restricted by a steel mask. The values of the se ries resistance, shunt resistance, ideality factors, and barrier heights are calculated from the measured dark current-voltage (I-V) data using the conventional and Cheung function methods. Using the lambert W function, calculated series resistance and shunt resistance from I-V data(Illumination Condition). Under dark and illuminated conditions, 1 hr dye loading time cell has low series resistance and high shunt resistance compared to other cells. At optimum 1 hour dye-loading time cell give better performance with the con version efficiency of 2.7%, short circuit current density of 8.9 (mA/cm2 ), open circuit voltage(Voc) of 0.53 (V), Fill factor(FF) of 0.56 respectively.