A Comparative Study On Silicon, Germanium And Silicon Carbide Based Power Mosfet And Pin Diode

Abstract

Improving switching characteristics is one of the ongoing challenges for all power electronics devices like- transistors, MOSFETs, diodes. For overcoming this particular challenge, researchers have been working on its internal structures, setups as well as several material-based studies. In this study, the switching characteristics of MOSFETs and PiN diodes have been analysed. For the MOSFET, the DC characteristics are shown after changing its base materials by Si, Ge and SiC but the overall study and simulation setups were kept as usual. Among the three, the Ge based MOSFET shows comparatively better response than the MOSFETs of Si and SiC based in terms of its turn on voltage and output characteristics. Same type of materials-based study were done for the PiN diodes. The Ge based PiN diode depicts better forward recovery time as well as forward recovery voltage than for the others two materials. This study describes briefly about the outcomes from the three MOSFETs along with the three PiN diodes